MBE growth of GaN
Mike Murphy, Tyler Eustis, Bill Schaff
Stephane Evoy, Harold Craignead; CL, STM
| Prior to the MURI
| 11 months of the MURI
|
| | |
| Growth Rate | 0.1µm/hr
| 0.6 µm/hr
|
| 300K Electron mobility |
85cm2/Vsec
| 251cm2/Vsec
|
| Estimated defect density
| >1x1011 cm-2
| 2-4x1010 cm-2
|
| GaN nucleation layer |
low temperature anneal
| high temperature anneal
|
| Atomic nitrogen source |
Oxford PBN liner
| EPI single PBN piece
|
| Substrate | Sapphire
| Sapphire
|