Molecular Beam Epitaxy at Cornell University


This is the Cornell MBE capabilities home page. It contains information about the MBE facility located in Electrical Engineering, Phillips Hall Room 417, phone number 607-255-9609.

  • Growth of GaAs, GaN, InN, and related arsenide compounds at Cornell

    The machines here include:

  • Intevac MOD GEN II gas source

  • Riber 2300 solid source


    Layout of Phillips Hall clean room (prior to 1998)

    Layout of Phillips Hall clean room

    October 2002 move of MBE machines

    GaAs undoped purity qualification

    Having custom materials grown at the facility


    Some other MBE activities at Cornell include:

  • Real-time X-ray during MBE

  • Supersonic jet MBE

    Other WWW sites related to compound semiconductors at Cornell

    Other WWW sites related to MBE worldwide Some upcoming meetings:

    WOCSEMMAD 2006

    Lester Eastman Conference 2006

  • Archive server statistics (March 1997 - March 2001)

      Current Server Statistics


  • MBE server maintained by:
    schaff@iiiv.tn.cornell.edu
    Bill Schaff

    Last modified: 16-Jan-2006 15:24:48. This page has been accessed 52,059 times since March 21, 2000

    "This material is based upon work supported by the National Science Foundation under Grant No. 9602336."