InN and Related III-Nitrides at Cornell University
This WWW site contains information about
InN (indium nitride) and related wide bandgap semiconductors.
InN has been grown by Molecular Beam Epitaxy (MBE) and its variant, Migration
Enhanced Epitaxy (MEE) since 1999 using the gas-source MBE machine (GSMBE).
Recent publications:
Improvement on epitaxial grown of InN by migration enhanced epitaxy”,
Hai Lu, William J. Schaff, Jeonghyun Hwang, Hong Wu, Wesley Yeo, Amit Pharkya,
and Lester F. Eastman, Applied Physics Letters
77, Issue 16, pp. 2548-2550, October 16, 2000
"Growth of InN for Heterojunction Field Effect Transistor
Applications by Plasma Enhanced MBE, Schaff, W.J.; Hai Lu; Jeonghyun Hwang;
Hong Wu, Proceedings. 2000 IEEE/Cornell Conference, on Advanced
Concepts in High Performance Devices, Page(s): 225 -231l
"Effect of an AlN buffer layer on the epitaxial
growth of InN by molecular-beam epitaxy", Hai Lu, William J. Schaff, Jeonghyun
Hwang, Hong Wu, Goutam Koley, and Lester F. Eastman, Applied Physics Letters,
Volume 79, Issue 10 pp. 1489-1491 September 3, 2001
Conference presentations scheduled:
MRS Spring meeting, April 2001, San Francisco. Download
the powerpoint presentation file.
Electronics Materials Conference, June, 2001 Notre Dame
MRS Fall meeting, November 2001, Boston.
Links
InN
entry in National Compound Semiconductor
Materials Roadmap
Last modified: 13-Aug-2004 11:57:55.
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