MBE Growth of Normal and Inverted 2-dimensional Electron Gases in GaN

8/10/98


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MBE Growth of Normal and Inverted 2-dimensional Electron Gases in GaN

Outline

MBE Growth Conditions

Piezo HFET structure grown by MBE on an OMVPE GaN buffer

Piezo HFET by MBE on AlN buffer

Piezo HFET structure grown by MBE on 6H SiC - Si-face

Inverted Piezo HFET structure grown by MBE on(1000) sapphire substrate

Inverted Piezo HFET structure grown by MBE on(1000) sapphire substrate

Integrated sheet charge profiles from CV measurements of 2DEG on MBE buffers

Rules for polarity control of PEMBE growth of AlGaN/GaN 2DEG

Ga desorption resulting from opening Al shutter as measured by RGA

CV Profile of 2DEG for 3m GaN buffer on 50 AlN grown by MBE

Author: Schaff

Email: schaff@iiiv.tn.cornell.edu

Home Page: http://www.iiiv.cornell.edu/~schaff/

Other information:
5th Nitride Workshop St. Louis, MO August 4-7, 1998

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