This is the Cornell WWW page with information about
GaAs (gallium arsenide) and related semiconductors.
GaAs has been grown at Cornell since the mid-1970s -
first for high speed transistors, then for laser and
detector applications.
More than 10,000 III-arsenide compound semiconductor
wafers have been grown by MBE at Cornell.
One of the many features available by MBE growth includes high purity
growth of undoped GaAs. This capability has enabled the study of
structures exhibiting electron mobilities exceeding 1,000,000
cm2/Vsec at 4K. Attention to many details is required to obtain
this performance. Some discussion of machine maintenance and operation
for
high purity capabilities is available.
February 22, 1997
Please send your comments and suggestions to: schaff@iiiv.tn.cornell.edu.