Brian Foutz Electrical Engineering  Cornell University  429 Phillips Hall  Ithaca, NY 14853  phone: (607) 255-9609  fax: (607) 255-4742  home: (607) 256-1620  email: bef2@cornell.edu

Since May of 1995, I have been studying electron transport in compound semiconductors, specifically the III-V nitrides, under the direction of Professor Lester Eastman. Through computer simulations employing a Monte Carlo approach, the electron drift velocity, ballistic electron transport, and velocity overshoot effects are examined as a function of the applied electric field. This information is used in the simulation and design of high power, high frequency electronic devices, such as AlGaN/GaN heterojunction field effect transistors and nitride based static induction transistors.

For a list of my publications please see my resume.

Resources

Physical Constants for Transport Studies of the Group III-Ntrides

Nitride Polarization and HFET Modeling Parameters

AlGaN/GaN HFET Experimental Data and References

Compound Semiconductor Research at Cornell University

Lots of nice Nitride related links

People working with the III-V nitrides at Cornell

The homepage for Professor Michael Shur and this research group.

Poster: Electron Transport in Gallium Nitride and Indium Nitride (4 Slides : June 1997)

MURI Presentation Master Slide and Information